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This descriptive textbook provides a clear look at the theories and process technologies necessary for understanding the modern power semiconductor devices, i.e. from the fundamentals of p-n junction electrostatics, unipolar MOSFET and superjunction structures, bipolar IGBT, to the most recent wide bandgap SiC and GaN devices. It also covers their associated semiconductor process technologies. Real examples based on actual fabricated devices, with the process steps described in clear detail are especially useful. This book is suitable for university courses on power semiconductor or power electronic devices. Device designers and researchers will also find this book a good reference in their work, especially for those focusing on the advanced device development and design aspects.
Carrier Physics and Junction Electrostatics
Bipolar Junction Diode
Power Metal–Oxide–Semiconductor Field-Effect Transistor
Insulated-Gate Bipolar Transistor
Silicon Carbide Power Devices
Gallium Nitride Power Devices
Fabrication and Modeling of Power Devices
Practical Case Studies in Silicon Power Devices
Practical Case Studies in Wide Bandgap Power Devices
Readership: Researchers, academics, professionals, final-year undergraduate and graduate students in circuits & systems and electrical & electronic engineering.