'The Defect Recognition and Image Processing' series of conferences provide a valuable overview of current techniques used to assess, monitor and characterize defects from the atomic scale to inhomogeneities in complete silicon wafers. They are written for physicists, electrical and electronic engineers researching these problems. This volume addresses advances in defect analysing techniques and instrumentation and their application to substrates, epilayers and devices; the merits and limits of characterization techniques; standardisation; correlations between defects and device performance, including degradation and failure analysis; and the adaptation and application of standard characterization techniques to new materials. It also discusses the impressive advances made possible by the increase in the number of nanoscale scanning techniques now available. It investigates defects in layers and devices, and examines the problems which have arisen in characterizing gallium nitride and silicon carbide.