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Pre-eminent forum for dissemination of results in compound materials and devices; essential library reference; prestigious reviews of development of the field, and likely directions for future research. These proceedings provide an international perspective on the latest research and an overview of recent, important developments in all III-V compound semiconductors such as GaAs, InP and GaN, II-VI compounds such as ZnS, ZnSe, CdTe, IV-IV compounds such as SiC and SiGe, and IV-VI compounds such as PbTe and SnTe. Of particular note in this volume is the special session on piezoelectric (or potentially smart) material heterostructures (Ga, Al, In)N, which will influence future research and development funding. As the primary forum for research into these materials and their device application they are an essential reference for all researchers in semiconductor physics, electronic and electrical engineering.